Panasonic engineers have developed a new, slimmer MOS image
sensor technology which enables digital cameras, camcorders, and
smartphone cameras to achieve higher sensitivity and improved
Official press release follow
Panasonic Develops New High Picture Quality MOS Image Sensor
with Industry's Highest Sensitivity*
Osaka, Japan - Panasonic Corporation has
successfully developed high sensitivity and high picture quality
technologies for new MOS image sensors by improving the sensitivity
of the company's νMaicovicon®*2 MOS image sensor and
suppressing uneven color and brightness, which may be an issue for
low-profile cameras, thereby ensuring more uniform image quality.
Using these technologies, Panasonic will start mass production of a
new MOS image sensor (MN34110) for digital cameras, a diagonal 7.7
mm (1/2.33-inch type) sensor with 14 megapixel effective
resolution, in December 2011 and continues to develop various
Current high-sensitivity MOS image sensors suppress unevenness in
brightness. CCDs have low color-mixing characteristics that
suppress color unevenness. The rapidly expanding market for digital
cameras with higher image quality and a slimmer body has resulted
in greater demand for a stable supply of image sensors that offer
both high sensitivity and uniform picture quality.
Panasonic has achieved both MOS image sensor's high sensitivity and
uniform picture quality using the new MOS image sensor
technologies, enabling digital cameras and camcorders as well as
cameras incorporated in smartphones and other mobile terminals to
be slimmer with higher sensitivity and improved picture
The new MOS image sensor has the following features:
- The fine process technologies provide a sensitivity of 3050
el/lx/sec/μm2, the industry's highest*1 as a
MOS image sensor.
- The new light-focusing structure significantly expands the
incident light angle, ensuring uniform and high picture quality, as
well as produces a slimmer camera.
- The simple manufacturing process is based on the current MOS
image sensor structure, ensuring a stable supply.
The new MOS image sensor has been created using the following
- The 32 and 45 nm (nanometers) leading-edge semiconductor
process technologies lower the wiring layer profile, expand the
opening area, and increase the photo diode volume.
- The low color-mixing characteristics are enhanced by
light-focusing structure design technologies that use a
three-dimensional wave optics design to minimize light leakage at
the structural boundaries.
- Image sensor mass-production technologies allow stable
production of MOS image sensors with high picture-quality.
*1: Based on Panasonic's data as of May 12, 2011
*2: νMaicovicon is a registered trademark of Panasonic